Technische Details 2SB817 SANYO
Description: 140V/12A AF 60W OUTPUT APPLICATI, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 0.5A, 5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5A, 5V, Frequency - Transition: 15MHz, Supplier Device Package: TO-3PN, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 120 W.
Weitere Produktangebote 2SB817
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2SB817 | Hersteller : KIA |
 2003 TO-3P |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SB817 Produktcode: 15195
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Lieblingsprodukt
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Hersteller : Sanyo |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-3PB fT: 15 MHz U, V: 140 U, V: 160 I, А: 12 h21,max: 200 |
Produkt ist nicht verfügbar
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2SB817 | Hersteller : EVVO |
Description: 140V/12A AF 60W OUTPUT APPLICATI Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 0.5A, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5A, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-3PN Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 120 W |
Produkt ist nicht verfügbar |