2SB817D onsemi
Hersteller: onsemi
Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: P-CHANNEL SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
180+ | 2.75 EUR |
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Technische Details 2SB817D onsemi
Description: P-CHANNEL SILICON TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V, Frequency - Transition: 15MHz, Supplier Device Package: TO-3PB, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 100 W.
Weitere Produktangebote 2SB817D nach Preis ab 2.75 EUR bis 2.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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2SB817D | Hersteller : Sanyo |
Description: P-CHANNEL SILICON TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-3PB Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
auf Bestellung 18604 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB817D | Hersteller : ONSEMI |
Description: ONSEMI - 2SB817D - 2SB817D, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 18604 Stücke: Lieferzeit 14-21 Tag (e) |