2SB857C-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: TRANS PNP 50V 4A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 163+ | 3.10 EUR |
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Technische Details 2SB857C-E Renesas Electronics Corporation
Description: TRANS PNP 50V 4A TO-220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 4V, Frequency - Transition: 15MHz, Supplier Device Package: TO-220AB, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 40 W.
Weitere Produktangebote 2SB857C-E nach Preis ab 2.71 EUR bis 3.23 EUR
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2SB857-C(E) | Hersteller : Renesas |
Trans GP BJT PNP 50V 4A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 1074 Stücke: Lieferzeit 14-21 Tag (e) |
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