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2SC2612

2SC2612 Renesas Electronics Corporation

HITAS01042-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 3A, 5V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
144+3.44 EUR
Mindestbestellmenge: 144
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Technische Details 2SC2612 Renesas Electronics Corporation

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 3A, 5V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 30 W.

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2SC2612 Hersteller : HIT HITAS01042-1.pdf?t.download=true&u=5oefqw 00+ TO220AB
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)