2SC2712-Y

2SC2712-Y Shenzhen Slkormicro Semicon Co., Ltd.


2SC2712-Y%20SOT-23.PDF Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 50V 150MW 120@2MA,6V 150MA NPN S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 2205 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
228+0.077 EUR
368+0.048 EUR
514+0.034 EUR
1000+0.03 EUR
Mindestbestellmenge: 112
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Technische Details 2SC2712-Y Shenzhen Slkormicro Semicon Co., Ltd.

Description: 50V 150MW 120@2MA,6V 150MA NPN S, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: SOT-23, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.

Weitere Produktangebote 2SC2712-Y

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2SC2712Y Hersteller : TOSHIBA
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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2SC2712-Y 2SC2712-Y Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. 2SC2712-Y%20SOT-23.PDF Description: 50V 150MW 120@2MA,6V 150MA NPN S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC2712-Y Hersteller : Toshiba B36FFC1387166E97B81D7DEF0BA3DD38D74098E3F32DB352254ED0D02C053EAA.pdf Bipolar Transistors - BJT
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