2SC2713-GR,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.096 EUR |
| 6000+ | 0.086 EUR |
| 9000+ | 0.081 EUR |
| 15000+ | 0.075 EUR |
| 21000+ | 0.071 EUR |
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Technische Details 2SC2713-GR,LF Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 150 mW.
Weitere Produktangebote 2SC2713-GR,LF nach Preis ab 0.083 EUR bis 0.48 EUR
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2SC2713-GR,LF | Toshiba |
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
auf Bestellung 24491 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC2713-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO-236 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 25776 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC2713-GR,LF |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
auf Bestellung 24491 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.46 EUR |
| 12+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.094 EUR |
| 6000+ | 0.083 EUR |
| 2SC2713-GR,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 25776 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 73+ | 0.29 EUR |
| 117+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |