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2SC2839E-SPA-AC onsemi

2SC2839.pdf Hersteller: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: NPN
Gain: 25dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
Frequency - Transition: 320MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: 3-SPA
Part Status: Active
auf Bestellung 11700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.081 EUR
Mindestbestellmenge: 6662
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Technische Details 2SC2839E-SPA-AC onsemi

Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: NPN, Gain: 25dB, Power - Max: 150mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 20V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V, Frequency - Transition: 320MHz, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Supplier Device Package: 3-SPA, Part Status: Active.

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2SC2839E-SPA-AC Hersteller : ONSEMI 2SC2839.pdf Description: ONSEMI - 2SC2839E-SPA-AC - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 35000 Stücke:
Lieferzeit 14-21 Tag (e)