Produkte > ONSEMI > 2SC3361-6-TB-E

2SC3361-6-TB-E ONSEMI


nd_datasheet
Hersteller: ONSEMI
Description: ONSEMI - 2SC3361-6-TB-E - EACH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1500+0.49 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SC3361-6-TB-E ONSEMI

Description: TRANS NPN 50V 0.15A 3-CP, Package / Case: TO-236-3, SC-59, SOT-23-3, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: 3-CP, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Packaging: Bulk.

Weitere Produktangebote 2SC3361-6-TB-E nach Preis ab 0.51 EUR bis 0.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SC3361-6-TB-E 2SC3361-6-TB-E Sanyo 2SA1331-2SC3361.pdf Description: TRANS NPN 50V 0.15A 3-CP
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: 3-CP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Bulk
auf Bestellung 110210 Stücke:
Lieferzeit 10-14 Tag (e)
1069+0.51 EUR
Mindestbestellmenge: 1069 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC3361-6-TB-E 2SA1331-2SC3361.pdf
Hersteller: Sanyo
Description: TRANS NPN 50V 0.15A 3-CP
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: 3-CP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Bulk
auf Bestellung 110210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1069+0.51 EUR
Mindestbestellmenge: 1069 Stücke
Im Einkaufswagen  Stück im Wert von  UAH