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2SC3380ASTR-E Renesas

rej03g0713_2sc3380ds.pdf Hersteller: Renesas
Description: 2SC3380ASTR - SILICON NPN TRIPLE
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V
Frequency - Transition: 80MHz
Supplier Device Package: UPAK
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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Technische Details 2SC3380ASTR-E Renesas

Description: 2SC3380ASTR - SILICON NPN TRIPLE, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 20mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 20V, Frequency - Transition: 80MHz, Supplier Device Package: UPAK, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W.