2SC3583-T1B-A Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: 2SC3583 - MD
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SOT23-3 (TO-236)
Part Status: Obsolete
auf Bestellung 114160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 666+ | 0.73 EUR |
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Technische Details 2SC3583-T1B-A Renesas Electronics Corporation
Description: 2SC3583 - MD, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 65mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Supplier Device Package: SOT23-3 (TO-236), Part Status: Obsolete.
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