2SC3600D Sanyo
Hersteller: Sanyo
Description: 2SC3600 - NPN EPITAXIAL PLANAR S
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
Description: 2SC3600 - NPN EPITAXIAL PLANAR S
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
314+ | 2.34 EUR |
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Technische Details 2SC3600D Sanyo
Description: NPN SILICON TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V, Frequency - Transition: 400MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 1.2 W.
Weitere Produktangebote 2SC3600D nach Preis ab 2.34 EUR bis 2.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2SC3600D | Hersteller : onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.2 W |
auf Bestellung 2241 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3600D | Hersteller : ONSEMI |
Description: ONSEMI - 2SC3600D - 2SC3600D, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2241 Stücke: Lieferzeit 14-21 Tag (e) |