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2SC3646S-P-TD-E

2SC3646S-P-TD-E onsemi


Hersteller: onsemi
Description: TRANS NPN 100V 1A
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1109+0.44 EUR
Mindestbestellmenge: 1109 Stücke
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Technische Details 2SC3646S-P-TD-E onsemi

Description: TRANS NPN 100V 1A, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: PCP, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.

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2SC3646S-P-TD-E 2SC3646S-P-TD-E onsemi Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3646S-P-TD-E ON Semiconductor EN2005-D-310414.pdf Bipolar Transistors - BJT BIP NPN 1A 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3646S-P-TD-E
2SC3646S-P-TD-E
Hersteller: onsemi
Description: TRANS NPN 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3646S-P-TD-E EN2005-D-310414.pdf
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 1A 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH