2SC3646T-TD-E onsemi
Hersteller: onsemi
Description: TRANS NPN 100V 1A PCP
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
| Anzahl | Preis |
|---|---|
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC3646T-TD-E onsemi
Description: TRANS NPN 100V 1A PCP, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: PCP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 100 V.
Weitere Produktangebote 2SC3646T-TD-E nach Preis ab 0.26 EUR bis 0.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2SC3646T-TD-E | onsemi |
Description: TRANS NPN 100V 1A PCP Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| 2SC3646T-TD-E | onsemi |
Bipolar Transistors - BJT BIP NPN 1A 100V |
auf Bestellung 2254 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC3646T-TD-E |
|
Hersteller: onsemi
Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 2SC3646T-TD-E |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 1A 100V
Bipolar Transistors - BJT BIP NPN 1A 100V
auf Bestellung 2254 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.34 EUR |
| 2000+ | 0.31 EUR |
| 10000+ | 0.26 EUR |