| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
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Technische Details 2SC3649S-TD-E onsemi
Description: TRANS NPN 160V 1.5A PCP, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 1.5 A, Part Status: Active, Supplier Device Package: PCP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC3649S-TD-E nach Preis ab 0.63 EUR bis 1.99 EUR
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2SC3649S-TD-E | Hersteller : onsemi |
 Description: TRANS NPN 160V 1.5A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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