Technische Details 2SC3649S-TD-E ON Semiconductor
Description: TRANS NPN 160V 1.5A PCP, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 1.5 A, Part Status: Active, Supplier Device Package: PCP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC3649S-TD-E nach Preis ab 0.49 EUR bis 2.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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2SC3649S-TD-E | ON Semiconductor |
 Trans GP BJT NPN 160V 1.5A 1500mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3649S-TD-E | onsemi |
Bipolar Transistors - BJT BIP NPN 1.5A 160V |
auf Bestellung 23871 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3649S-TD-E | onsemi |
Description: TRANS NPN 160V 1.5A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SC3649S-TD-E |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 1.5A 1500mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT NPN 160V 1.5A 1500mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.55 EUR |
| 2000+ | 0.49 EUR |
| 2SC3649S-TD-E |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 1.5A 160V
Bipolar Transistors - BJT BIP NPN 1.5A 160V
auf Bestellung 23871 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| 2SC3649S-TD-E |
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Hersteller: onsemi
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: TRANS NPN 160V 1.5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |