Technische Details 2SC3649T-TD-H ON Semiconductor
Description: TRANS NPN 160V 1.5A PCP, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 1.5 A, Part Status: Obsolete, Supplier Device Package: PCP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC3649T-TD-H
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2SC3649T-TD-H | Hersteller : onsemi |
 Description: TRANS NPN 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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2SC3649T-TD-H | Hersteller : onsemi |
Description: TRANS NPN 160V 1.5A PCP Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |