Produkte > ONSEMI > 2SC3651-OTE-TD-E

2SC3651-OTE-TD-E onsemi

ONSMS37271-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: BIP NPN 0.2A 100V
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1902+0.26 EUR
Mindestbestellmenge: 1902
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SC3651-OTE-TD-E onsemi

Description: BIP NPN 0.2A 100V, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: PCP, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.

Weitere Produktangebote 2SC3651-OTE-TD-E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SC3651-OTE-TD-E Hersteller : ONSEMI ONSMS37271-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - 2SC3651-OTE-TD-E - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 126000 Stücke:
Lieferzeit 14-21 Tag (e)
2SC3651-OTE-TD-E Hersteller : ON Semiconductor ONSMS37271-1.pdf?t.download=true&u=5oefqw HIGH-GAIN/LF AMPLIFIER
Produkt ist nicht verfügbar