Produkte > ROHM SEMICONDUCTOR > 2SC4102U3HZGT106S
2SC4102U3HZGT106S

2SC4102U3HZGT106S Rohm Semiconductor


datasheet?p=2SC4102U3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SC4102U3HZGT106S Rohm Semiconductor

Description: TRANS NPN 120V 0.05A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 2mA, 6V, Frequency - Transition: 140MHz, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote 2SC4102U3HZGT106S nach Preis ab 0.18 EUR bis 0.85 EUR

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2SC4102U3HZGT106S 2SC4102U3HZGT106S Hersteller : Rohm Semiconductor datasheet?p=2SC4102U3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Grade: Automotive
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 5918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
2SC4102U3HZGT106S 2SC4102U3HZGT106S Hersteller : ROHM Semiconductor datasheet?p=2SC4102U3HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Bipolar Transistors - BJT H. Volt 120V, 50mA UMT3
auf Bestellung 7077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.22 EUR
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH