2SC4213BTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS NPN 20V 0.3A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
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Technische Details 2SC4213BTE85LF Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V, Frequency - Transition: 30MHz, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 100 mW.
Weitere Produktangebote 2SC4213BTE85LF nach Preis ab 0.15 EUR bis 1.04 EUR
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2SC4213BTE85LF | Hersteller : TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 0.3A; 0.1W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Collector-emitter voltage: 20V Current gain: 350...1200 Collector current: 0.3A Type of transistor: NPN Power dissipation: 0.1W Polarisation: bipolar Frequency: 30MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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2SC4213BTE85LF | Hersteller : TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 0.3A; 0.1W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Collector-emitter voltage: 20V Current gain: 350...1200 Collector current: 0.3A Type of transistor: NPN Power dissipation: 0.1W Polarisation: bipolar Frequency: 30MHz |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC4213BTE85LF | Hersteller : Toshiba |
Bipolar Transistors - BJT NPN 0.3A IC 20V Gen Purp Trans |
auf Bestellung 17537 Stücke: Lieferzeit 14-28 Tag (e) |
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2SC4213BTE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Frequency - Transition: 30MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 100 mW |
auf Bestellung 10904 Stücke: Lieferzeit 21-28 Tag (e) |
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