2SC5201(T6MURATAFM Toshiba Semiconductor and Storage

Description: TRANS NPN 600V 0.05A TO-92MOD, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 50 mA, Part Status: Obsolete, Supplier Device Package: TO-92MOD, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.