auf Bestellung 7085 Stücke:
Lieferzeit 374-378 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.84 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
Produktrezensionen
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Technische Details 2SC5227A-4-TB-E onsemi
Description: RF TRANS NPN 10V 7GHZ 3-CP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1dB @ 1GHz, Supplier Device Package: 3-CP.
Weitere Produktangebote 2SC5227A-4-TB-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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2SC5227A-4-TB-E | Hersteller : ON Semiconductor |
 Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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2SC5227A-4-TB-E | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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2SC5227A-4-TB-E | Hersteller : onsemi |
Description: RF TRANS NPN 10V 7GHZ 3-CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Supplier Device Package: 3-CP |
Produkt ist nicht verfügbar |
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2SC5227A-4-TB-E | Hersteller : onsemi |
Description: RF TRANS NPN 10V 7GHZ 3-CP Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Supplier Device Package: 3-CP |
Produkt ist nicht verfügbar |
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2SC5227A-4-TB-E | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
Produkt ist nicht verfügbar |