auf Bestellung 2114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.13 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.60 EUR |
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Technische Details 2SC5415AE-TD-E onsemi
Description: RF TRANS NPN 12V 6.7GHZ PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 9dB, Power - Max: 800mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V, Frequency - Transition: 6.7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: PCP, Part Status: Obsolete.
Weitere Produktangebote 2SC5415AE-TD-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2SC5415AE-TD-E | Hersteller : ON Semiconductor |
 RF Transistor |
Produkt ist nicht verfügbar |
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2SC5415AE-TD-E | Hersteller : onsemi |
Description: RF TRANS NPN 12V 6.7GHZ PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: PCP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC5415AE-TD-E | Hersteller : onsemi |
Description: RF TRANS NPN 12V 6.7GHZ PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: PCP Part Status: Obsolete |
Produkt ist nicht verfügbar |