2SC5606-T1-A CEL
Hersteller: CEL
Description: RF TRANS NPN 3.3V 21GHZ SOT523
Supplier Device Package: SOT-523
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Frequency - Transition: 21GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.3V
Current - Collector (Ic) (Max): 35mA
Power - Max: 115mW
Gain: 14dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
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Technische Details 2SC5606-T1-A CEL
Description: RF TRANS NPN 3.3V 21GHZ SOT523, Supplier Device Package: SOT-523, Noise Figure (dB Typ @ f): 1.2dB @ 2GHz, Frequency - Transition: 21GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V, Voltage - Collector Emitter Breakdown (Max): 3.3V, Current - Collector (Ic) (Max): 35mA, Power - Max: 115mW, Gain: 14dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC5606-T1-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SC5606-T1-A | CEL |
Description: RF TRANS NPN 3.3V 21GHZ SOT523 Supplier Device Package: SOT-523 Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Frequency - Transition: 21GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Voltage - Collector Emitter Breakdown (Max): 3.3V Current - Collector (Ic) (Max): 35mA Power - Max: 115mW Gain: 14dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SC5606-T1-A | CEL |
 RF Bipolar Transistors NPN High Frequency |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC5606-T1-A |
Hersteller: CEL
Description: RF TRANS NPN 3.3V 21GHZ SOT523
Supplier Device Package: SOT-523
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Frequency - Transition: 21GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.3V
Current - Collector (Ic) (Max): 35mA
Power - Max: 115mW
Gain: 14dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 3.3V 21GHZ SOT523
Supplier Device Package: SOT-523
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Frequency - Transition: 21GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max): 3.3V
Current - Collector (Ic) (Max): 35mA
Power - Max: 115mW
Gain: 14dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5606-T1-A |
|
Hersteller: CEL
RF Bipolar Transistors NPN High Frequency
RF Bipolar Transistors NPN High Frequency
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH