Technische Details 2SC563200L PANPSONI
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V, Frequency - Transition: 1.1GHz, Supplier Device Package: SMini3-G1, Part Status: Obsolete.
Weitere Produktangebote 2SC563200L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| 2SC563200L | Hersteller : PANPSONIC |
 09+ |
auf Bestellung 24018 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC563200L | Hersteller : Panasonic Electronic Components |
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Frequency - Transition: 1.1GHz Supplier Device Package: SMini3-G1 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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2SC563200L | Hersteller : Panasonic Electronic Components |
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Frequency - Transition: 1.1GHz Supplier Device Package: SMini3-G1 Part Status: Obsolete |
Produkt ist nicht verfügbar |