Technische Details 2SC563200L PANPSONIC
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V, Frequency - Transition: 1.1GHz, Supplier Device Package: SMini3-G1, Part Status: Obsolete.
Weitere Produktangebote 2SC563200L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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2SC563200L | Panasonic Electronic Components |
 Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Frequency - Transition: 1.1GHz Supplier Device Package: SMini3-G1 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2SC563200L | Panasonic Electronic Components |
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V Frequency - Transition: 1.1GHz Supplier Device Package: SMini3-G1 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC563200L |
|
Hersteller: Panasonic Electronic Components
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Frequency - Transition: 1.1GHz
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Frequency - Transition: 1.1GHz
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC563200L |
|
Hersteller: Panasonic Electronic Components
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Frequency - Transition: 1.1GHz
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Description: RF TRANS NPN 8V 1.1GHZ SMINI3-G1
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
Frequency - Transition: 1.1GHz
Supplier Device Package: SMini3-G1
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH