2SC5659T2LN Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS NPN 25V 0.05A VMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: VMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Technische Details 2SC5659T2LN Rohm Semiconductor
Description: TRANS NPN 25V 0.05A VMT3, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 50 mA, Supplier Device Package: VMT3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC5659T2LN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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2SC5659T2LN | Rohm Semiconductor |
Description: TRANS NPN 25V 0.05A VMT3 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: VMT3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SC5659T2LN | ROHM Semiconductor |
Bipolar Transistors - BJT NPN 25V 50MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC5659T2LN |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 25V 0.05A VMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: VMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS NPN 25V 0.05A VMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: VMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC5659T2LN |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 25V 50MA
Bipolar Transistors - BJT NPN 25V 50MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH