2SC5659T2LN Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS NPN 25V 0.05A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 150 mW
Description: TRANS NPN 25V 0.05A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 150 mW
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Technische Details 2SC5659T2LN Rohm Semiconductor
Description: TRANS NPN 25V 0.05A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V, Frequency - Transition: 300MHz, Supplier Device Package: VMT3, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 150 mW.
Weitere Produktangebote 2SC5659T2LN
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SC5659T2LN | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 25V 0.05A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
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2SC5659T2LN | Hersteller : ROHM Semiconductor | Bipolar Transistors - BJT NPN 25V 50MA |
Produkt ist nicht verfügbar |