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2SC5706-P-E

2SC5706-P-E ON Semiconductor


EN6912-D-310420.pdf Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 5A 50V
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Technische Details 2SC5706-P-E ON Semiconductor

Description: TRANS NPN 100V 5A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 800 mW.

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2SC5706-P-E 2SC5706-P-E Hersteller : onsemi Description: TRANS NPN 100V 5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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