2SC5706-TL-E ON Semiconductor
auf Bestellung 16100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 700+ | 0.5 EUR |
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Technische Details 2SC5706-TL-E ON Semiconductor
Description: TRANS NPN 50V 5A TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: TP-FA, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 800 mW.
Weitere Produktangebote 2SC5706-TL-E nach Preis ab 0.58 EUR bis 2.2 EUR
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2SC5706-TL-E | Hersteller : onsemi |
Description: TRANS NPN 50V 5A TP-FAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5706-TL-E | Hersteller : onsemi |
Bipolar Transistors - BJT BIP NPN 5A 50V |
auf Bestellung 58249 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5706-TL-E | Hersteller : onsemi |
Description: TRANS NPN 50V 5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
auf Bestellung 1325 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC5706-TL-E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC5706-TL-E | Hersteller : ON Semiconductor |
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auf Bestellung 232 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SC5706-TL-E | Hersteller : SONYO |
08+PB |
auf Bestellung 535 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC5706-TL-E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 5A 800mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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2SC5706-TL-E | Hersteller : ONSEMI |
Description: ONSEMI - 2SC5706-TL-E - BIPOLAR TRANSISTORMSL: MSL 1 - unbegrenzt SVHC: Lead (17-Jan-2022) |
Produkt ist nicht verfügbar |
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| 2SC5706-TL-E | Hersteller : ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Power dissipation: 0.8W Collector current: 5A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 400MHz |
Produkt ist nicht verfügbar |


