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2SC5763M

2SC5763M onsemi


SNYOS06810-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 800mA, 4A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 5V
Frequency - Transition: 17MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.75 W
auf Bestellung 3603 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
452+1.61 EUR
Mindestbestellmenge: 452
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Technische Details 2SC5763M onsemi

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 800mA, 4A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 5V, Frequency - Transition: 17MHz, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1.75 W.

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2SC5763M Hersteller : ONSEMI SNYOS06810-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SC5763M - 2SC5763M, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3603 Stücke:
Lieferzeit 14-21 Tag (e)