2SC5876T106R Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 285+ | 0.62 EUR |
| 306+ | 0.57 EUR |
| 335+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.33 EUR |
| 2000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 12000+ | 0.27 EUR |
| 24000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SC5876T106R Rohm Semiconductor
Description: TRANS NPN 60V 0.5A UMT3, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SC5876T106R nach Preis ab 0.32 EUR bis 1.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SC5876T106R | ROHM Semiconductor |
 Bipolar Transistors - BJT NPN 60V 0.5A |
auf Bestellung 3025 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
2SC5876T106R | Rohm Semiconductor |
Description: TRANS NPN 60V 0.5A UMT3 Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 500 mA Part Status: Not For New Designs Supplier Device Package: UMT3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V |
auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SC5876T106R |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 60V 0.5A
Bipolar Transistors - BJT NPN 60V 0.5A
auf Bestellung 3025 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 2SC5876T106R |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 60V 0.5A UMT3
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Description: TRANS NPN 60V 0.5A UMT3
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 26+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |