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2SC5876T106R

2SC5876T106R Rohm Semiconductor

2sc5876t106q-e.pdf Hersteller: Rohm Semiconductor
Trans GP BJT NPN 60V 0.5A 200mW 3-Pin UMT T/R
auf Bestellung 136888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
285+0.51 EUR
306+0.46 EUR
335+0.4 EUR
500+0.33 EUR
1000+0.26 EUR
2000+0.23 EUR
6000+0.21 EUR
12000+0.19 EUR
24000+0.18 EUR
Mindestbestellmenge: 285
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Technische Details 2SC5876T106R Rohm Semiconductor

Description: TRANS NPN 60V 0.5A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Frequency - Transition: 300MHz, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 200 mW.

Weitere Produktangebote 2SC5876T106R nach Preis ab 0.21 EUR bis 1.14 EUR

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2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 1401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.7 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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2SC5876T106R 2SC5876T106R Hersteller : ROHM Semiconductor rohm semiconductor_rohm-s-a0001071406-1.pdf Bipolar Transistors - BJT NPN 60V 0.5A
auf Bestellung 3025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.14 EUR
10+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
3000+0.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
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Im Einkaufswagen  Stück im Wert von  UAH