Produkte > ROHM SEMICONDUCTOR > 2SC5876T106R
2SC5876T106R

2SC5876T106R Rohm Semiconductor

2sc5876t106q-e.pdf Hersteller: Rohm Semiconductor
Trans GP BJT NPN 60V 0.5A 200mW 3-Pin UMT T/R
auf Bestellung 67888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
978+0.16 EUR
1113+ 0.14 EUR
1163+ 0.12 EUR
2000+ 0.11 EUR
6000+ 0.099 EUR
12000+ 0.09 EUR
Mindestbestellmenge: 978
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SC5876T106R Rohm Semiconductor

Description: TRANS NPN 60V 0.5A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Frequency - Transition: 300MHz, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 200 mW.

Weitere Produktangebote 2SC5876T106R nach Preis ab 0.33 EUR bis 1.16 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
auf Bestellung 1626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 24
2SC5876T106R 2SC5876T106R Hersteller : ROHM Semiconductor rohm_semiconductor_rohm-s-a0001071406-1-1742642.pdf Bipolar Transistors - BJT NPN 60V 0.5A
auf Bestellung 2613 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.16 EUR
54+ 0.98 EUR
100+ 0.71 EUR
500+ 0.56 EUR
1000+ 0.44 EUR
3000+ 0.37 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 45
2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 300MHz
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
Produkt ist nicht verfügbar