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2SC5876T106R

2SC5876T106R ROHM Semiconductor

rohm semiconductor_rohm-s-a0001071406-1.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 60V 0.5A
auf Bestellung 3025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.11 EUR
10+0.68 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
3000+0.27 EUR
Mindestbestellmenge: 3
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Technische Details 2SC5876T106R ROHM Semiconductor

Description: TRANS NPN 60V 0.5A UMT3, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SC5876T106R nach Preis ab 0.3 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
2SC5876T106R 2SC5876T106R Hersteller : Rohm Semiconductor 2sc5876t106q-e.pdf Description: TRANS NPN 60V 0.5A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH