2SC6000(TE16L1,NQ) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 20 W
Description: 2SC6000(TE16L1,NQ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 20 W
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Technische Details 2SC6000(TE16L1,NQ) Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ), Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V, Supplier Device Package: PW-MOLD, Part Status: Active, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 20 W.
Weitere Produktangebote 2SC6000(TE16L1,NQ)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SC6000(TE16L1,NQ) | Hersteller : Toshiba |
 Bipolar Transistors - BJT Pb-F POWER TRANSISTOR NEW PW-MOLD MOQ=2000 PD=20W F=150MHZ |
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