Technische Details 2SC6017-E ON Semiconductor
Description: TRANS NPN 50V 10A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 200MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 950 mW.
Weitere Produktangebote 2SC6017-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2SC6017-E | Hersteller : ONSEMI |
 Description: ONSEMI - 2SC6017-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 52366 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC6017-E Produktcode: 107502
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Transistoren > Bipolar-Transistoren NPN |
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2SC6017-E | Hersteller : onsemi |
Description: TRANS NPN 50V 10A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 200MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
Produkt ist nicht verfügbar |