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2SC6026MFVGR,L3F

2SC6026MFVGR,L3F Toshiba Semiconductor and Storage

docget.jsp?did=6106&prodName=2SC6026MFV
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.055 EUR
16000+0.05 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SC6026MFVGR,L3F Toshiba Semiconductor and Storage

Description: TRANS NPN 50V 0.15A VESM, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: VESM, Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR), Power - Max: 150 mW.

Weitere Produktangebote 2SC6026MFVGR,L3F nach Preis ab 0.039 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SC6026MFVGR,L3F 2SC6026MFVGR,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 26375 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
103+0.2 EUR
167+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.071 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFVGR,L3F 2SC6026MFVGR,L3F Toshiba 2SC6026MFV_datasheet_en_20140301-1916509.pdf Bipolar Transistors - BJT VESM PLN
auf Bestellung 35104 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.39 EUR
13+0.26 EUR
100+0.11 EUR
1000+0.067 EUR
2500+0.057 EUR
8000+0.044 EUR
24000+0.039 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFVGR,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFVGR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 26375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
103+0.2 EUR
167+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.071 EUR
Mindestbestellmenge: 63 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SC6026MFVGR,L3F 2SC6026MFV_datasheet_en_20140301-1916509.pdf
2SC6026MFVGR,L3F
Hersteller: Toshiba
Bipolar Transistors - BJT VESM PLN
auf Bestellung 35104 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+0.39 EUR
13+0.26 EUR
100+0.11 EUR
1000+0.067 EUR
2500+0.057 EUR
8000+0.044 EUR
24000+0.039 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH