2SC6099-E ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SC6099-E - 2SC6099-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SC6099-E ONSEMI
Description: TRANS NPN 100V 2A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 800 mW.
Weitere Produktangebote 2SC6099-E nach Preis ab 0.73 EUR bis 0.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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2SC6099-E | onsemi |
Description: TRANS NPN 100V 2A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
auf Bestellung 5700 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC6099-E | ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 2A 100V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC6099-E |
|
Hersteller: onsemi
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 757+ | 0.73 EUR |
| 2SC6099-E |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 2A 100V
Bipolar Transistors - BJT BIP NPN 2A 100V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)