2SC6099-E onsemi
Hersteller: onsemi
Description: TRANS NPN 100V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
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Technische Details 2SC6099-E onsemi
Description: TRANS NPN 100V 2A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 800 mW.
Weitere Produktangebote 2SC6099-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SC6099-E | ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 2A 100V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SC6099-E |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 2A 100V
Bipolar Transistors - BJT BIP NPN 2A 100V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)