2SCR372P5T100R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: MPT3
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
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Technische Details 2SCR372P5T100R Rohm Semiconductor
Description: TRANS NPN 120V 0.7A MPT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Active, Supplier Device Package: MPT3, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SCR372P5T100R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SCR372P5T100R | Rohm Semiconductor |
Trans GP BJT NPN 120V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SCR372P5T100R |
|
Hersteller: Rohm Semiconductor
Trans GP BJT NPN 120V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
Trans GP BJT NPN 120V 0.7A 2000mW 4-Pin(3+Tab) MPT T/R
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH