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2SCR502EBHZGTL

2SCR502EBHZGTL Rohm Semiconductor


datasheet?p=2SCR502EBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SCR502EBHZGTL Rohm Semiconductor

Description: TRANS NPN 30V 0.5A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 200nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 360MHz, Supplier Device Package: EMT3F (SOT-416FL), Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 150 mW, Qualification: AEC-Q101.

Weitere Produktangebote 2SCR502EBHZGTL nach Preis ab 0.09 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SCR502EBHZGTL 2SCR502EBHZGTL Hersteller : Rohm Semiconductor datasheet?p=2SCR502EBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 0.5A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.12 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
2SCR502EBHZGTL 2SCR502EBHZGTL Hersteller : ROHM Semiconductor datasheet?p=2SCR502EBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT NPN 30V 0.5A 0.15W SOT-416FL
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.69 EUR
10+0.43 EUR
100+0.27 EUR
1000+0.13 EUR
3000+0.11 EUR
9000+0.09 EUR
24000+0.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH