2SCR502EBHZGTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A EMT3F
Qualification: AEC-Q101
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: EMT3F (SOT-416FL)
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 200nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.092 EUR |
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Technische Details 2SCR502EBHZGTL Rohm Semiconductor
Description: TRANS NPN 30V 0.5A EMT3F, Qualification: AEC-Q101, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: EMT3F (SOT-416FL), Frequency - Transition: 360MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Current - Collector Cutoff (Max): 200nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SCR502EBHZGTL nach Preis ab 0.11 EUR bis 0.46 EUR
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2SCR502EBHZGTL | ROHM Semiconductor |
Bipolar Transistors - BJT NPN 30V 0.5A 0.15W SOT-416FL |
auf Bestellung 2986 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR502EBHZGTL | Rohm Semiconductor |
Description: TRANS NPN 30V 0.5A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: EMT3F (SOT-416FL) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SCR502EBHZGTL |
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Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 30V 0.5A 0.15W SOT-416FL
Bipolar Transistors - BJT NPN 30V 0.5A 0.15W SOT-416FL
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 0.45 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2SCR502EBHZGTL |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.5A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 65+ | 0.27 EUR |
| 105+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |