2SCR513PT100 Rohm Semiconductor
auf Bestellung 5544 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 869+ | 0.17 EUR |
| 942+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| 4000+ | 0.12 EUR |
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Technische Details 2SCR513PT100 Rohm Semiconductor
Description: TRANS NPN 50V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V, Frequency - Transition: 360MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 2 W.
Weitere Produktangebote 2SCR513PT100 nach Preis ab 0.27 EUR bis 1.43 EUR
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2SCR513PT100 | Hersteller : Rohm Semiconductor |
 Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 1437 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR513PT100 | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SCR513PT100 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 1A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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2SCR513PT100 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Frequency - Transition: 360MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2SCR513PT100 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT TRANS GP BJT NPN 50V 1A 4PIN |
Produkt ist nicht verfügbar |