2SD1111-AA ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - 2SD1111-AA - 2SD1111-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SD1111-AA ONSEMI
Description: TRANS NPN DARL 50V 0.7A 3NP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V, Frequency - Transition: 200MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 600 mW.
Weitere Produktangebote 2SD1111-AA nach Preis ab 0.23 EUR bis 0.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SD1111-AA | Hersteller : Sanyo |
Description: TRANS NPN DARL 50V 0.7A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
| 2SD1111-AA | Hersteller : Fairchild Semiconductor |
Description: TRANS NPN DARL 50V 0.7A 3NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
|