2SD1111-AA ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SD1111-AA - 2SD1111-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SD1111-AA ONSEMI
Description: TRANS NPN DARL 50V 0.7A 3-NP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V, Frequency - Transition: 200MHz, Supplier Device Package: 3-NP, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 600 mW.
Weitere Produktangebote 2SD1111-AA nach Preis ab 0.25 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SD1111-AA | Sanyo Electric |
2SD1111-AA |
auf Bestellung 10500 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| 2SD1111-AA | ON Semiconductor |
2SD1111-AA |
auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
| 2SD1111-AA | Sanyo |
Description: TRANS NPN DARL 50V 0.7A 3-NP Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V Frequency - Transition: 200MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 600 mW |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SD1111-AA |
|
Hersteller: Sanyo Electric
2SD1111-AA
2SD1111-AA
auf Bestellung 10500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2280+ | 0.29 EUR |
| 10000+ | 0.25 EUR |
| 2SD1111-AA |
|
Hersteller: ON Semiconductor
2SD1111-AA
2SD1111-AA
auf Bestellung 96000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2280+ | 0.29 EUR |
| 10000+ | 0.25 EUR |
| 2SD1111-AA |
|
Hersteller: Sanyo
Description: TRANS NPN DARL 50V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
Description: TRANS NPN DARL 50V 0.7A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 50mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1514+ | 0.36 EUR |