2SD1133C-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V
Frequency - Transition: 7MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 40 W
auf Bestellung 1658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 258+ | 1.88 EUR |
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Technische Details 2SD1133C-E Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 4V, Frequency - Transition: 7MHz, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 40 W.
Weitere Produktangebote 2SD1133C-E nach Preis ab 1.9 EUR bis 2.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis | ||||||||
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| 2SD1133C-E | Hersteller : Renesas |
2SD1133C-E |
auf Bestellung 1653 Stücke: Lieferzeit 14-21 Tag (e) |
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