2SD1207S ON Semiconductor


1564en930-d.pdf Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 2A 1000mW Automotive 3-Pin Case MP Bag
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Technische Details 2SD1207S ON Semiconductor

Description: TRANS NPN 50V 2A 3MP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.

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2SD1207S 2SD1207S Hersteller : onsemi 2SD1207.pdf Description: TRANS NPN 50V 2A 3MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2SD1207S Hersteller : onsemi EN930_D-245502.pdf Bipolar Transistors - BJT BIP NPN 2A 50V
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