2SD1221-Y(Q) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 3A PW-MOLD
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: PW-MOLD
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Technische Details 2SD1221-Y(Q) Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 3A PW-MOLD, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: PW-MOLD, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH