2SD1347T-AE ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - 2SD1347T-AE - NPN EPITAXIAL PLANAR SILICON TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2SD1347T-AE ONSEMI
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SD1347T-AE nach Preis ab 0.71 EUR bis 0.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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| 2SD1347T-AE | Hersteller : onsemi |
Description: NPN EPITAXIAL PLANAR SILICON Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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