2SD1347T-AE ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SD1347T-AE - NPN EPITAXIAL PLANAR SILICON TRANSISTOR
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SD1347T-AE ONSEMI
Description: TRANS NPN 50V 3A 3-MP, Part Status: Active, Packaging: Bulk, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: 3-MP, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body.
Weitere Produktangebote 2SD1347T-AE nach Preis ab 0.88 EUR bis 1.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SD1347T-AE | onsemi |
Description: TRANS NPN 50V 3A 3-MP Part Status: Active Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: 3-MP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||
| 2SD1347T-AE | ON Semiconductor |
2SD1347T-AE |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SD1347T-AE |
|
Hersteller: onsemi
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Description: TRANS NPN 50V 3A 3-MP
Part Status: Active
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: 3-MP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 683+ | 0.88 EUR |
| 2SD1347T-AE |
|
Hersteller: ON Semiconductor
2SD1347T-AE
2SD1347T-AE
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 647+ | 1.02 EUR |
| 1000+ | 0.93 EUR |