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2SD1683S

2SD1683S onsemi

2SB1143,2SD1683.pdf Hersteller: onsemi
Description: TRANS NPN 50V 4A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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Technische Details 2SD1683S onsemi

Description: TRANS NPN 50V 4A TO126ML, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: TO-126ML, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.5 W.

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2SD1683S 2SD1683S Hersteller : onsemi EN2063_D-310434.pdf Bipolar Transistors - BJT BIP NPN 4A 50V
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