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2SD1768STPR

2SD1768STPR Rohm Semiconductor

2SD1898%2C1733%2C1768S%2C1863.pdf
Hersteller: Rohm Semiconductor
Description: TRANS NPN 80V 1A SPT
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SPT
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Reel (TR)
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Technische Details 2SD1768STPR Rohm Semiconductor

Description: TRANS NPN 80V 1A SPT, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SPT, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Reel (TR).