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2SD1801T-TL-E

2SD1801T-TL-E onsemi


en2112-d.pdf
Hersteller: onsemi
Description: TRANS NPN 50V 2A TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 380800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1211+0.42 EUR
Mindestbestellmenge: 1211
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Technische Details 2SD1801T-TL-E onsemi

Description: TRANS NPN 50V 2A TP-FA, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TP-FA, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SD1801T-TL-E

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2SD1801T-TL-E Hersteller : ON Semiconductor EN2112-D-43864.pdf Bipolar Transistors - BJT BIP NPN 2A 50V
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH