2SD1816S-E ON Semiconductor

Description: TRANS NPN 100V 4A TP, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 4 A, Part Status: Obsolete, Supplier Device Package: TP, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.