Technische Details 2SD1816S-E ON Semiconductor
Description: TRANS NPN 100V 4A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V, Frequency - Transition: 180MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Weitere Produktangebote 2SD1816S-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SD1816S-E | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 100V 4A 1000mW 3-Pin(3+Tab) TP Bag |
Produkt ist nicht verfügbar |
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2SD1816S-E | Hersteller : onsemi |
Description: TRANS NPN 100V 4A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
Produkt ist nicht verfügbar |