2SD1918TLQ Rohm Semiconductor
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 124+ | 2.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SD1918TLQ Rohm Semiconductor
Description: TRANS NPN 160V 1.5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V, Frequency - Transition: 80MHz, Supplier Device Package: CPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 10 W.
Weitere Produktangebote 2SD1918TLQ nach Preis ab 0.72 EUR bis 2.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SD1918TLQ | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN 160V 1.5A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 80MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 10 W |
auf Bestellung 4050 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
2SD1918TLQ | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 160V 1.5A 1000mW 3-Pin(2+Tab) CPT T/R |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
2SD1918TLQ | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 160V 1.5A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 80MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 10 W |
Produkt ist nicht verfügbar |
|||||||||||||
 |
2SD1918TLQ | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 160V 1.5A |
Produkt ist nicht verfügbar |