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2SD1963T100S

2SD1963T100S Rohm Semiconductor

2SD1963.pdf
Hersteller: Rohm Semiconductor
Description: TRANS NPN 20V 3A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: MPT3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details 2SD1963T100S Rohm Semiconductor

Description: TRANS NPN 20V 3A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: MPT3, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).