2SD2033AT114E Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS NPN 160V 1.5A HRT
Packaging: Tape & Reel (TR)
Package / Case: HRT
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 80MHz
Supplier Device Package: HRT
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.8 W
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Technische Details 2SD2033AT114E Rohm Semiconductor
Description: TRANS NPN 160V 1.5A HRT, Packaging: Tape & Reel (TR), Package / Case: HRT, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 80MHz, Supplier Device Package: HRT, Part Status: Obsolete, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1.8 W.
Weitere Produktangebote 2SD2033AT114E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SD2033AT114E | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |