2SD400E-MP-AE ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - 2SD400E-MP-AE - EACH
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2SD400E-MP-AE ONSEMI
Description: TRANS NPN 25V 1A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V, Supplier Device Package: TP, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 900 mW.
Weitere Produktangebote 2SD400E-MP-AE nach Preis ab 0.31 EUR bis 0.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| 2SD400E-MP-AE | Hersteller : Sanyo |
Description: TRANS NPN 25V 1A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V Supplier Device Package: TP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 900 mW |
auf Bestellung 2630 Stücke: Lieferzeit 10-14 Tag (e) |
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