2SD896D onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 70 W
auf Bestellung 7041 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 268+ | 1.85 EUR |
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Technische Details 2SD896D onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V, Frequency - Transition: 15MHz, Supplier Device Package: TO-3PB, Current - Collector (Ic) (Max): 7 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 70 W.
Weitere Produktangebote 2SD896D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| 2SD896D |
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auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 2SD896D | Hersteller : ONSEMI |
Description: ONSEMI - 2SD896D - 2SD896D, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 7041 Stücke: Lieferzeit 14-21 Tag (e) |