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2SJ305TE85LF

2SJ305TE85LF Toshiba Semiconductor and Storage

2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305 Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SJ305TE85LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 30V 200MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V, Power Dissipation (Max): 200mW (Ta), Supplier Device Package: SC-59, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V.

Weitere Produktangebote 2SJ305TE85LF nach Preis ab 0.25 EUR bis 1.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SJ305TE85LF 2SJ305TE85LF Hersteller : Toshiba A4B0C82F84B89D4B92761869859C8D51E82D1D91DF6C970CBA9485D8F56DB2ED.pdf MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
auf Bestellung 2228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.15 EUR
10+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
3000+0.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
2SJ305TE85LF 2SJ305TE85LF Hersteller : Toshiba Semiconductor and Storage 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305 Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 17089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH